GaN Device Engineer

Company: Infineon Technologies Americas Corp.
Location: San Jose
Posted on: January 27, 2023

Job Description:

Part of your life. Part of tomorrow.

We make life easier, safer and greener - with technology that achieves more, consumes less and is accessible to everyone. Microelectronics from Infineon is the key to a better future. Efficient use of energy, environmentally-friendly mobility and security in a connected world - we solve some of the most critical challenges that our society faces while taking a conscientious approach to the use of natural resources.

IR HiRel Products Inc. is an equal opportunity employer. All qualified applicants will receive consideration for employment without regard to race, color, religion, sex (including pregnancy, childbirth, or related medical conditions), gender identity, national origin, ancestry, citizenship, age, physical or mental disability, legally protected medical condition, family care status, military or veteran status, marital status, domestic partner status, sexual orientation, or any other basis protected by local, state, or federal laws. Applicants with questions about access or requiring a reasonable accommodation for any part of the application or hiring process should contact the Talent Network by phone at (408) 503-2194.

Employment at Infineon is contingent upon proof of your legal right to work in the United States under applicable law, verification of satisfactory references and successful completion of a background check and drug test, and signing all your on-boarding documents .

In some instances, if applicable, U.S. export control laws require that Infineon obtain a U.S. government export license prior to releasing technologies to certain persons. This offer is contingent upon Infineon's ability to satisfy these export control laws as related to your employment and anticipated job activities. The decision whether or not to submit and/or pursue an export license to satisfy this contingency, if applicable, shall be at Infineon's sole discretion.

IMPORTANT NOTICE:
Infineon is requiring all new U.S. employees and contractors to be fully vaccinated against COVID-19. Full vaccination is defined as two weeks after both doses of a two-dose vaccine or two weeks since a single-dose vaccine has been administered. Anyone unable to be vaccinated, either because of a sincerely held religious belief or a medical condition or disability that prevents them from being vaccinated, can request a reasonable accommodation.

Infineon Technologies takes data privacy and identity theft very seriously. As such, we do not request personally-identifiable information (PII) from applicants over the internet or electronically. Please kindly refrain from disclosing your PII electronically during the application process or to unauthorized websites that may purport to be Infineon or any of our affiliates.

Wage range that the company expects to pay for a qualified candidate:

Minimum of $173,800 salary per year
Maximum of $239,000 salary per year

In addition, all employees will be eligible to participate in an incentive plan.

#LI-CR1

In your new role you will:

Lead the development of Radiation Hardened and Radiation Tolerant GaN power switches
Actively contribute in roadmaps and future technology brainstorming discussions
Define device design and fabrication platform specifics to meet the application targets in a manufacturable and cost effective manner
Perform device and process simulations, photo mask design and testing
Support the platform/product design review process
Coach junior staff in the team in device design and fabrication process
Utilize your knowledge of prior art, by writing up a description of the new invention and working with the IP team to file a disclosure

You are best equipped for this task if you have:
You have hands on experience in design and development of GaN power switches and in the challenges accompanying that. You use quantitative analysis skills to quickly understand complex situations and collaborate as a team to come up with creative solutions. You have excellent communication skills and seamlessly interact with people on every level. You are a strategic thinker who owns responsibility and is able to work with minimal direction. Furthermore, you work with ease in Synopsys TCAD software suite and in Cadence environment for layout design.



MS or PhD in Electrical Engineering preferred or in Materials Science with focus on GaN
5-10 years of experience in leading GaN technology development
Strong knowledge in HEMT device physics and fabrication of GaN power switches
Proficiency in Synopsys TCAD and Cadence suite of software along with electrical testing of GaN power switches, DOE definition and analysis using JMP. Experience in Radiation Hardened preferred
Ability to work & communicate effectively with team members located across the globe

Infineon Power & Sensor Systems (PSS) semiconductors play a vital role in enabling intelligent power management, smart sensitivity as well as fast and reliable data processing in an increasingly digitalized world. IR HiRel, part of Infineon PSS, is a leader in high-reliability, rad hard power management and RF solutions for space and other extreme environments.

Our leading-edge power devices make chargers, adapters, power sources and lighting systems smarter, smaller, lighter and more energy-efficient. Our trusted sensors increase the context sensitivity of "things" and systems such as HMI, and our RF chips power fast and reliable data communication.

- We drive leading-edge power management, sensing and data transfer capabilities -

Click here for more information about working at PSS with interesting employee and management insights and an overview with more #PSSDreamJobs.

Keywords: Infineon Technologies Americas Corp., San Jose , GaN Device Engineer, Engineering , San Jose, California