GaN Device Engineer
Company: Infineon Technologies Americas Corp.
Location: San Jose
Posted on: January 27, 2023
|
|
Job Description:
Part of your life. Part of tomorrow.
We make life easier, safer and greener - with technology that
achieves more, consumes less and is accessible to everyone.
Microelectronics from Infineon is the key to a better future.
Efficient use of energy, environmentally-friendly mobility and
security in a connected world - we solve some of the most critical
challenges that our society faces while taking a conscientious
approach to the use of natural resources.
IR HiRel Products Inc. is an equal opportunity employer. All
qualified applicants will receive consideration for employment
without regard to race, color, religion, sex (including pregnancy,
childbirth, or related medical conditions), gender identity,
national origin, ancestry, citizenship, age, physical or mental
disability, legally protected medical condition, family care
status, military or veteran status, marital status, domestic
partner status, sexual orientation, or any other basis protected by
local, state, or federal laws. Applicants with questions about
access or requiring a reasonable accommodation for any part of the
application or hiring process should contact the Talent Network by
phone at (408) 503-2194.
Employment at Infineon is contingent upon proof of your legal right
to work in the United States under applicable law, verification of
satisfactory references and successful completion of a background
check and drug test, and signing all your on-boarding documents
.
In some instances, if applicable, U.S. export control laws require
that Infineon obtain a U.S. government export license prior to
releasing technologies to certain persons. This offer is contingent
upon Infineon's ability to satisfy these export control laws as
related to your employment and anticipated job activities. The
decision whether or not to submit and/or pursue an export license
to satisfy this contingency, if applicable, shall be at Infineon's
sole discretion.
IMPORTANT NOTICE:
Infineon is requiring all new U.S. employees and contractors to be
fully vaccinated against COVID-19. Full vaccination is defined as
two weeks after both doses of a two-dose vaccine or two weeks since
a single-dose vaccine has been administered. Anyone unable to be
vaccinated, either because of a sincerely held religious belief or
a medical condition or disability that prevents them from being
vaccinated, can request a reasonable accommodation.
Infineon Technologies takes data privacy and identity theft very
seriously. As such, we do not request personally-identifiable
information (PII) from applicants over the internet or
electronically. Please kindly refrain from disclosing your PII
electronically during the application process or to unauthorized
websites that may purport to be Infineon or any of our
affiliates.
Wage range that the company expects to pay for a qualified
candidate:
Minimum of $173,800 salary per year
Maximum of $239,000 salary per year
In addition, all employees will be eligible to participate in an
incentive plan.
#LI-CR1
In your new role you will:
Lead the development of Radiation Hardened and Radiation Tolerant
GaN power switches
Actively contribute in roadmaps and future technology brainstorming
discussions
Define device design and fabrication platform specifics to meet the
application targets in a manufacturable and cost effective
manner
Perform device and process simulations, photo mask design and
testing
Support the platform/product design review process
Coach junior staff in the team in device design and fabrication
process
Utilize your knowledge of prior art, by writing up a description of
the new invention and working with the IP team to file a
disclosure
You are best equipped for this task if you have:
You have hands on experience in design and development of GaN power
switches and in the challenges accompanying that. You use
quantitative analysis skills to quickly understand complex
situations and collaborate as a team to come up with creative
solutions. You have excellent communication skills and seamlessly
interact with people on every level. You are a strategic thinker
who owns responsibility and is able to work with minimal direction.
Furthermore, you work with ease in Synopsys TCAD software suite and
in Cadence environment for layout design.
MS or PhD in Electrical Engineering preferred or in Materials
Science with focus on GaN
5-10 years of experience in leading GaN technology development
Strong knowledge in HEMT device physics and fabrication of GaN
power switches
Proficiency in Synopsys TCAD and Cadence suite of software along
with electrical testing of GaN power switches, DOE definition and
analysis using JMP. Experience in Radiation Hardened preferred
Ability to work & communicate effectively with team members located
across the globe
Infineon Power & Sensor Systems (PSS) semiconductors play a vital
role in enabling intelligent power management, smart sensitivity as
well as fast and reliable data processing in an increasingly
digitalized world. IR HiRel, part of Infineon PSS, is a leader in
high-reliability, rad hard power management and RF solutions for
space and other extreme environments.
Our leading-edge power devices make chargers, adapters, power
sources and lighting systems smarter, smaller, lighter and more
energy-efficient. Our trusted sensors increase the context
sensitivity of "things" and systems such as HMI, and our RF chips
power fast and reliable data communication.
- We drive leading-edge power management, sensing and data transfer
capabilities -
Click here for more information about working at PSS with
interesting employee and management insights and an overview with
more #PSSDreamJobs.
Keywords: Infineon Technologies Americas Corp., San Jose , GaN Device Engineer, Engineering , San Jose, California
Click
here to apply!
|